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NXP  2N7002E,215  MOSFET Transistor, N Channel, 385 mA, 60 V, 780 mohm, 10 V, 2 V

NXP 2N7002E,215
Technical Data Sheet (92.26KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The 2N7002E,215 is a N-channel enhancement mode Field-Effect Transistor (FET) in surface mount plastic package using Trench MOSFET technology. Suitable for logic level translator and high-speed line driver.
  • Logic-level compatible
  • Very fast switching

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
385mA
Drain Source Voltage Vds:
60V
On Resistance Rds(on):
0.78ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2V
Power Dissipation Pd:
830mW
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes

Associated Products