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NEXPERIA  2N7002,215  MOSFET Transistor, N Channel, 300 mA, 60 V, 2.8 ohm, 10 V, 2 V

NEXPERIA 2N7002,215
Manufacturer:
NEXPERIA NEXPERIA
Manufacturer Part No:
2N7002,215
Newark Part No.:
70R9742
Technical Datasheet:
See all Technical Docs

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Product Overview

The 2N7002,215 is a N-channel enhancement mode Field-Effect Transistor (FET) in surface mount plastic package using Trench MOSFET technology. Suitable for logic level gate drive sources and high-speed line drivers.
  • Logic-level compatible
  • Very fast switching

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
300mA
Drain Source Voltage Vds:
60V
On Resistance Rds(on):
2.8ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2V
Power Dissipation Pd:
830mW
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial

Legislation and Environmental

RoHS Compliant:
Yes
Independent Distributor

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MOSFET Transistor, N Channel, 300 mA, 60 V, 2.8 ohm, 10 V, 2 V

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MOSFET Transistor, N Channel, 300 mA, 60 V, 2.8 ohm, 10 V, 2 V

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