Low

NTE583 - 

RF Schottky Diode, Single, 70 V, 15 mA, 1 V, 2 pF, DO-35

NTE583 - RF Schottky Diode, Single, 70 V, 15 mA, 1 V, 2 pF, DO-35

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Manufacturer Part No:
NTE583
Newark Part No.:
31C5006
Technical Datasheet:
(EN)
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Product Overview

The NTE583 is a metal to silicon junction Silicon Rectifier Diode featuring high breakdown, low turn-on voltage and ultrafast switching. This device is primarily indented for high level UHF/VHF detection and pulse application with broad dynamic range.
  • 50mA Surge non-repetitive forward current
  • 400°C/W Junction-to-ambient thermal resistance
  • 70V Breakdown voltage
  • 2pF Small signal capacitance

Applications

RF Communications

Product Information

:
Single
:
70V
:
15mA
:
1V
:
2pF
:
DO-35
:
2 Pin
:
Each
:
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