NTE ELECTRONICS  NTE583  RF Schottky Diode, Single, 70 V, 15 mA, 1 V, 2 pF, DO-35

NTE ELECTRONICS NTE583

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Product Overview


The NTE583 is a metal to silicon junction Silicon Rectifier Diode featuring high breakdown, low turn-on voltage and ultrafast switching. This device is primarily indented for high level UHF/VHF detection and pulse application with broad dynamic range.
  • 50mA Surge non-repetitive forward current
  • 400°C/W Junction-to-ambient thermal resistance
  • 70V Breakdown voltage
  • 2pF Small signal capacitance

Applications

RF Communications
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Product Information


  • Diode Configuration Single
  • Reverse Voltage Vr 70V
  • Forward Current If Max 15mA
  • Forward Voltage VF Max 1V
  • Capacitance Ct 2pF
  • Diode Case Style DO-35
  • No. of Pins 2 Pin
  • Packaging Each
  • Product Range -
  • MSL -
  • SVHC To Be Advised

Availability

Availability:  524

Supplier Direct Ship  Continental US Only

Ships within 2-3 business days for in stock items

Price for: Each

Minimum order quantity: 1

Order multiple quantity: 1

Price: $1.74 $1.74

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Price

Quantity List Price
1 - 49 $1.74
50 - 99 $1.66
100 - 499 $1.62
500 - 999 $1.58
1000+ $1.49
 
 
Low

Legislation and Environmental


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Substitutes


  Newark Part No. Manufacturer Part No Manufacturer / Description
Avail Price Qty
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Exact
89K1806
1N5711

1N5711

STMICROELECTRONICS

Small Signal Schottky Diode, Single, 70 V, 15 mA, 410 mV, 200 °C

Availability:​ 8,599  

Price for: Each (Supplied on Cut Tape)

1+ $0.795 10+ $0.567 25+ $0.463 100+ $0.361 More pricing

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see cut-off times

More stock available week commencing 5/30/16

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