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NTE ELECTRONICS  NTE583  RF Schottky Diode, Single, 70 V, 15 mA, 1 V, 2 pF, DO-35

NTE ELECTRONICS NTE583
Technical Data Sheet (17.70KB) EN See all Technical Docs

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Product Overview

The NTE583 is a metal to silicon junction Silicon Rectifier Diode featuring high breakdown, low turn-on voltage and ultrafast switching. This device is primarily indented for high level UHF/VHF detection and pulse application with broad dynamic range.
  • 50mA Surge non-repetitive forward current
  • 400°C/W Junction-to-ambient thermal resistance
  • 70V Breakdown voltage
  • 2pF Small signal capacitance

 

Product Information

Diode Configuration:
Single
Reverse Voltage Vr:
70V
Forward Current If Max:
15mA
Forward Voltage VF Max:
1V
Capacitance Ct:
2pF
Diode Case Style:
DO-35
No. of Pins:
2 Pin
Packaging:
Each
Product Range:
-
MSL:
-
SVHC:
To Be Advised

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Applications

  • RF Communications

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

Small Signal Schottky Diode, Single, 70 V, 15 mA, 410 mV, 200 C

STMICROELECTRONICS

4,430:  in stock

Price for: Each (Supplied on Cut Tape)

1+ $0.468 10+ $0.316 100+ $0.136 1000+ $0.105

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