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NTE ELECTRONICS  NTE473  Bipolar - RF Transistor, NPN, 40 V, 500 MHz, 175 W, 1 A, 10 hFE

NTE ELECTRONICS NTE473
Technical Data Sheet (23.04KB) EN See all Technical Docs

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Product Overview

The NTE473 is a 40V NPN silicon Transistor designed for amplifier and oscillator applications. It is suitable for use as output, driver or predriver stages in VHF equipment.
  • 2.5W Output power
  • 10dB Minimum gain
  • 50% Efficiency
  • 65V Collector to base voltage (VCBO)
  • 4V Emitter to base voltage (VEBO)

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
40V
Transition Frequency ft:
500MHz
Power Dissipation Pd:
175W
DC Collector Current:
1A
DC Current Gain hFE:
10hFE
RF Transistor Case:
TO-39
No. of Pins:
3Pins
Operating Temperature Max:
200°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
To Be Advised

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Applications

  • Defence, Military & Aerospace;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

Associated Products