NTE ELECTRONICS  NTE458  JFET Transistor, JUNCTION FIELD EFFECT, RF FET, -50 V, 500 µA, 12 mA, -1.5 V, TO-92

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Product Information

  • Breakdown Voltage Vbr: -50V
  • Gate-Source Cutoff Voltage Vgs(off) Max: -1.5V
  • MSL: MSL 1 - Unlimited
  • No. of Pins: 3
  • Operating Temperature Max: 125°C
  • Power Dissipation Pd: 360mW
  • SVHC: No SVHC (17-Dec-2014)
  • Transistor Case Style: TO-92
  • Transistor Type: RF FET
  • Zero Gate Voltage Drain Current Idss Max: 12mA
  • Zero Gate Voltage Drain Current Idss Min: 500µA

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View this product in our online catalog

This product also features on the following pages and catalog editions:

  •  130/310
  •  132/311


Availability:  10

  • 10 in stock for same day shipping
Check stock and lead times
    Per the manufacturer, more stock expected week of 9/7/15

Price for: Each 1

Minimum order quantity: 1

Order multiple quantity: 1

Unit Price: $7.64



Quantity List Price
1 - 49 $7.64
50 - 99 $7.29
100 - 499 $7.14
500 - 999 $6.93
1000+ $6.57

Legislation and Environmental

  • Moisture Sensitivity Level: MSL 1 - Unlimited
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