Low

NTE ELECTRONICS  NTE37  Bipolar (BJT) Single Transistor, PNP, -140 V, 15 MHz, 100 W, -12 A, 200 hFE

NTE ELECTRONICS NTE37
Technical Data Sheet (23.71KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The NTE37 is a -140V Silicon PNP Complementary Transistor designed for AF power amplifier and high current switching applications.
  • Collector-base voltage (Vcbo = 160V)
  • Emitter-base voltage (Vebo = 6V)
  • AF power amplifier
  • High current switch

 

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-140V
Transition Frequency ft:
15MHz
Power Dissipation Pd:
100W
DC Collector Current:
-12A
DC Current Gain hFE:
200hFE
Transistor Case Style:
TO-3P
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
SVHC:
To Be Advised

Find similar products  grouped by common attribute

Applications

  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

Associated Products