NTE ELECTRONICS  NTE312  JFET Transistor, Junction Field Effect, -30 V, 5 mA, 15 mA, -6 V, TO-92, JFET

NTE ELECTRONICS NTE312

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Product Overview


The NTE312 is a N-channel silicon JFET (Junction Field Effect Transistor), designed for VHF amplifier and mixer applications. High trans conductance and high power gain. Drain and gate leads separated for high maximum stable gain.
  • Cross-modulation minimized by square-law transfer characteristic
  • High power gain
  • Drain and gate leads separated for high maximum stable gain
  • Cross-modulation minimized by square-law transfer characteristic

Applications

Communications & Networking; Imaging, Video & Vision
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Product Information


  • Breakdown Voltage Vbr -30V
  • Zero Gate Voltage Drain Current Idss Min 5mA
  • Zero Gate Voltage Drain Current Idss Max 15mA
  • Gate-Source Cutoff Voltage Vgs(off) Max -6V
  • Transistor Case Style TO-92
  • Transistor Type JFET
  • No. of Pins 3 Pin
  • Operating Temperature Max 125°C
  • Power Dissipation Pd 500 mW
  • MSL MSL 1 - Unlimited
  • Zero Gate Voltage Drain Current Idss 5mA to 15mA
  • SVHC To Be Advised

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This product also features on the following pages and catalog editions:

  •  131/311
  •  132/311

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Price: $2.13 $2.13

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1 - 99 $2.13
100 - 499 $2.00
500 - 999 $1.97
1000 - 1999 $1.91
2000+ $1.82
 
 
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Substitutes


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FAIRCHILD SEMICONDUCTOR

JFET Transistor, JFET, RF FET, -30 V, 6 mA, 13 mA, -8 V, TO-92

Availability:​ 9,382  

Price for: Each

1+ $0.174 250+ $0.131 500+ $0.117 1000+ $0.106 More pricing

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Freight Charge: $20.00 once per order

Delivery in 5-7 days for in stock items

More stock available week commencing 6/20/16

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