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NTE ELECTRONICS  NTE312  JFET Transistor, Junction Field Effect, -30 V, 5 mA, 15 mA, -6 V, TO-92, JFET

NTE ELECTRONICS NTE312
Technical Data Sheet (58.00KB) EN See all Technical Docs

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Product Overview

The NTE312 is a N-channel silicon JFET (Junction Field Effect Transistor), designed for VHF amplifier and mixer applications. High trans conductance and high power gain. Drain and gate leads separated for high maximum stable gain.
  • Cross-modulation minimized by square-law transfer characteristic
  • High power gain
  • Drain and gate leads separated for high maximum stable gain
  • Cross-modulation minimized by square-law transfer characteristic

 

Product Information

Breakdown Voltage Vbr:
-30V
Zero Gate Voltage Drain Current Idss Min:
5mA
Zero Gate Voltage Drain Current Idss Max:
15mA
Gate-Source Cutoff Voltage Vgs(off) Max:
-6V
Transistor Case Style:
TO-92
Transistor Type:
JFET
No. of Pins:
3 Pin
Operating Temperature Max:
125°C
Product Range:
-
Automotive Qualifications Standard:
-
Power Dissipation Pd:
500 mW
MSL:
MSL 1 - Unlimited
Zero Gate Voltage Drain Current Idss:
5mA to 15mA
SVHC:
To Be Advised

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Applications

  • Communications & Networking;
  • Imaging, Video & Vision

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

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