Low

NTE ELECTRONICS  NTE291  Bipolar (BJT) Single Transistor, NPN, 120 V, 4 MHz, 1.8 W, 4 A, 150 hFE

NTE ELECTRONICS NTE291
Technical Data Sheet (24.12KB) EN See all Technical Docs

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Product Overview

The NTE291 is a general purpose medium-power silicon Complementary Transistor, designed for use in switching and amplifier applications. They are especially designed for series and shunt regulators and as a driver and output stage of high fidelity amplifiers.
  • Low saturation voltage
  • Complement to NTE292

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
120V
Transition Frequency ft:
4MHz
Power Dissipation Pd:
1.8W
DC Collector Current:
4A
DC Current Gain hFE:
150hFE
Transistor Case Style:
TO-220
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
To Be Advised

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Applications

  • Audio;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

Associated Products