Low

NTE291 - 

Bipolar (BJT) Single Transistor, NPN, 120 V, 4 MHz, 1.8 W, 4 A, 150 hFE

NTE291 - Bipolar (BJT) Single Transistor, NPN, 120 V, 4 MHz, 1.8 W, 4 A, 150 hFE

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Manufacturer Part No:
NTE291
Newark Part No.:
29C4528
Technical Datasheet:
(EN)
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Product Overview

The NTE291 is a general purpose medium-power silicon Complementary Transistor, designed for use in switching and amplifier applications. They are especially designed for series and shunt regulators and as a driver and output stage of high fidelity amplifiers.
  • Low saturation voltage
  • Complement to NTE292

Applications

Audio, Industrial

Product Information

:
NPN
:
120V
:
4MHz
:
1.8W
:
4A
:
150hFE
:
TO-220
:
3Pins
:
150°C
:
-
:
-
:
-
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