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NTE ELECTRONICS  NTE263  Bipolar (BJT) Single Transistor, Darlington, NPN, 100 V, 65 W, 10 A, 20000 hFE

NTE ELECTRONICS NTE263
Technical Data Sheet (24.89KB) EN See all Technical Docs

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Product Overview

The NTE263 is a silicon NPN Darlington Bipolar Transistor designed for general purpose, power amplifier and low-speed switching applications.
  • 2V Maximum low collector-emitter saturation voltage VCE(sat) @ IC = 5A
  • Monolithic construction with built-in base-emitter shunt resistor
  • -65 to 150°C Operating junction temperature range

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
100V
Transition Frequency ft:
-
Power Dissipation Pd:
65W
DC Collector Current:
10A
DC Current Gain hFE:
20000hFE
Transistor Case Style:
TO-220
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
To Be Advised

Find similar products  grouped by common attribute

Applications

  • Power Management;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

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