Low

NTE263 - 

Bipolar (BJT) Single Transistor, Darlington, NPN, 100 V, 65 W, 10 A, 20000 hFE

NTE ELECTRONICS NTE263

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Manufacturer Part No:
NTE263
Newark Part No.:
51M8909
Technical Datasheet:
(EN)
See all Technical Docs

Product Overview

The NTE263 is a silicon NPN Darlington Bipolar Transistor designed for general purpose, power amplifier and low-speed switching applications.
  • 2V Maximum low collector-emitter saturation voltage VCE(sat) @ IC = 5A
  • Monolithic construction with built-in base-emitter shunt resistor
  • -65 to 150°C Operating junction temperature range

Applications

Power Management, Industrial

Product Information

:
NPN
:
100V
:
-
:
65W
:
10A
:
20000hFE
:
TO-220
:
3Pins
:
150°C
:
-
:
-
:
-
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