NTE ELECTRONICS  NTE2399  Power MOSFET, N Channel, 3.1 A, 1 kV, 500 mohm, 10 V, 4 V

NTE ELECTRONICS NTE2399

Image is for illustrative purposes only. Please refer to product description.

  • Manufacturer:
  • Newark Part No.: 29C4500
  • Manufacturer Part No NTE2399

Product Overview


The NTE2399 is a 1000V N-channel Enhancement Mode MOSFET designed for high speed power switching applications and simple drive requirements.
  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • High speed switch
  • Easy to parallel

Applications

Industrial
Back to top

Product Information


  • Transistor Polarity N Channel
  • Continuous Drain Current Id 3.1A
  • Drain Source Voltage Vds 1kV
  • On Resistance Rds(on) 0.5ohm
  • Rds(on) Test Voltage Vgs 10V
  • Threshold Voltage Vgs 4V
  • Power Dissipation Pd 125W
  • Transistor Case Style TO-220
  • No. of Pins 3Pins
  • Operating Temperature Max 150°C
  • MSL -
  • Operating Temperature Min -55 °C
  • SVHC To Be Advised

Availability

Availability:  0

Supplier Direct Ship Continental US Only

Price for: Each

Minimum order quantity: 1

Order multiple quantity: 1

Price: $9.31 $9.31

Buy

Price

Quantity List Price
1 - 49 $9.31
50 - 99 $8.88
100 - 499 $8.70
500 - 999 $8.44
1000+ $8.01
 
 
Low

Legislation and Environmental


Back to top

Similar Products

Customer Reviews


Customer Q&A Exchange

Community

Like to see information about this product from other customers?

 Read discussions, blogs, documents from our community members.

Filters:

Post a question to one of our experts or start a discussion and get responses from supplier experts and fellow engineers in our community.

Associated Products


Customers Also Bought