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NTE ELECTRONICS  NTE2399  Power MOSFET, N Channel, 3.1 A, 1 kV, 500 mohm, 10 V, 4 V

NTE ELECTRONICS NTE2399
Technical Data Sheet (61.90KB) EN See all Technical Docs

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Product Overview

The NTE2399 is a 1000V N-channel Enhancement Mode MOSFET designed for high speed power switching applications and simple drive requirements.
  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • High speed switch
  • Easy to parallel

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
3.1A
Drain Source Voltage Vds:
1kV
On Resistance Rds(on):
0.5ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
125W
Transistor Case Style:
TO-220
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Applications

  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

Associated Products