NTE ELECTRONICS  NTE2399  Power MOSFET, N Channel, 3.1 A, 1 kV, 500 mohm, 10 V, 4 V

NTE ELECTRONICS NTE2399

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  • Manufacturer:
  • Newark Part No.: 29C4500
  • Manufacturer Part No NTE2399

Product Overview


The NTE2399 is a 1000V N-channel Enhancement Mode MOSFET designed for high speed power switching applications and simple drive requirements.
  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • High speed switch
  • Easy to parallel

Applications

Industrial
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Product Specifications, Documents & More


  • Continuous Drain Current Id: 3.1A
  • Drain Source Voltage Vds: 1kV
  • MSL: -
  • No. of Pins: 3
  • On Resistance Rds(on): 0.5ohm
  • Operating Temperature Max: 150°C
  • Operating Temperature Min: -55°C
  • Power Dissipation Pd: 125W
  • Rds(on) Test Voltage Vgs: 10V
  • SVHC: To Be Advised
  • Threshold Voltage Vgs Typ: 4V
  • Transistor Case Style: TO-220
  • Transistor Polarity: N Channel

Availability

Availability:  0

    More stock available week commencing 6/20/16

Non-Cancelable / Non Returnable

Price for: Each 1

Minimum order quantity: 1

Order multiple quantity: 1

Price: $9.31 $9.31

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Price

Quantity List Price
1 - 49 $9.31
50 - 99 $8.88
100 - 499 $8.70
500 - 999 $8.44
1000+ $8.01
 
 
Low

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