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NTE ELECTRONICS  NTE2396  MOSFET Transistor, N Channel, 28 A, 100 V, 0.077 ohm, 10 V, 2 V

NTE ELECTRONICS NTE2396

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Product Overview

The NTE2396 is a 100V N-channel Enhancement Mode MOSFET designed for high speed power switching applications and simple drive requirements.
  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • Current sensing
  • High speed switch
  • Easy to parallel

Applications

Industrial

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Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
28A
Drain Source Voltage Vds:
100V
On Resistance Rds(on):
0.077ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2V
Power Dissipation Pd:
150W
Transistor Case Style:
TO-220
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes

Applications

  • Industrial

Substitutes

MOSFET Transistor, N Channel, 28 A, 100 V, 77 mohm, 10 V, 4 V

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5,268: 

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