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NTE ELECTRONICS  NTE2387  Power MOSFET, N Channel, 4 A, 800 V, 2.7 ohm, 10 V, 3 V

NTE ELECTRONICS NTE2387
Technical Data Sheet (58.24KB) EN See all Technical Docs

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Product Overview

The NTE2387 is a N-channel enhancement-mode Power MOSFET with high speed switch. This device offers 800V drain-source voltage(VDS) as well as drain-gate voltage(VDGR).
  • 150°C Operating junction temperature

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
4A
Drain Source Voltage Vds:
800V
On Resistance Rds(on):
2.7ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
3V
Power Dissipation Pd:
125W
Transistor Case Style:
TO-220
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
-
SVHC:
To Be Advised

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Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

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