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NTE ELECTRONICS  NTE2379  Power MOSFET, N Channel, 6.2 A, 600 V, 1.2 ohm, 10 V, 4 V

NTE ELECTRONICS NTE2379
Technical Data Sheet (60.59KB) EN See all Technical Docs

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Product Overview

The NTE2379 is a 600V N-channel Enhancement Mode MOSFET with dynamic dv/dt rating designed for simple drive requirements.
  • Repetitive avalanche rated
  • High speed switch
  • Easy to parallel

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
6.2A
Drain Source Voltage Vds:
600V
On Resistance Rds(on):
1.2ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
125W
Transistor Case Style:
TO-220
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Applications

  • Motor Drive & Control

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

Power MOSFET, N Channel, 6.2 A, 600 V, 1.2 ohm, 10 V, 4 V

VISHAY

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