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NTE ELECTRONICS  NTE2371  MOSFET Transistor, Switching, P Channel, 19 A, -100 V, 0.2 ohm, 10 V, 4 V

NTE ELECTRONICS NTE2371
Technical Data Sheet (61.89KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The NTE2371 is a -100V P-channel Enhancement Mode MOSFET with dynamic dv/dt rating designed for simple drive requirements.
  • Repetitive avalanche rated
  • High speed switch
  • Easy to parallel

 

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
19A
Drain Source Voltage Vds:
-100V
On Resistance Rds(on):
0.2ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
150W
Transistor Case Style:
TO-220
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Packaging:
Each
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Applications

  • Motor Drive & Control

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes

Substitutes