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NTE ELECTRONICS  NTE2322  Bipolar Transistor Array, PNP, 40 V, 650 mW, 600 mA, 100 hFE, DIP

NTE ELECTRONICS NTE2322
Technical Data Sheet (22.30KB) EN See all Technical Docs

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Product Overview

The NTE2322 is a -40V Silicon PNP Transistor designed for Quad and general purpose applications.
  • Collector-base voltage (Vcb = 60V)
  • Emitter-base voltage (Veb = 5V)

 

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
40V
Power Dissipation Pd:
650mW
DC Collector Current:
600mA
DC Current Gain hFE:
100hFE
Transistor Case Style:
DIP
No. of Pins:
14Pins
Operating Temperature Max:
125°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-55 °C
Transition Frequency ft:
200 MHz
SVHC:
To Be Advised

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Applications

  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
No
Authorized Distributor

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