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NTE ELECTRONICS  NTE133  JFET Transistor, Junction Field Effect, -25 V, 500 µA, 15 mA, -6.5 V, TO-106, JFET

NTE ELECTRONICS NTE133
Technical Data Sheet (53.34KB) EN See all Technical Docs

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Product Overview

The NTE133 is a N-channel JFET designed for general purpose AF amplifier applications.
  • 25V Drain-source voltage
  • 25V Drain-gate voltage
  • -25V Gate-source voltage
  • 10mA Gate current

 

Product Information

Breakdown Voltage Vbr:
-25V
Zero Gate Voltage Drain Current Idss Min:
500µA
Zero Gate Voltage Drain Current Idss Max:
15mA
Gate-Source Cutoff Voltage Vgs(off) Max:
-6.5V
Transistor Case Style:
TO-106
Transistor Type:
JFET
No. of Pins:
3 Pin
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
Power Dissipation Pd:
300 mW
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

Associated Products