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NTE ELECTRONICS  NTE123A  Bipolar (BJT) Single Transistor, NPN, 40 V, 300 MHz, 800 mW, 800 mA, 300 hFE

NTE ELECTRONICS NTE123A
Technical Data Sheet (33.10KB) EN See all Technical Docs

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Product Overview

The NTE123A is a 40V Silicon NPN Complementary Transistor designed for applications such as medium speed switching and amplifiers from audio to VHF frequencies.
  • Widely used industry standard complementary transistor
  • Low collector saturation voltage
  • High current gain bandwidth

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
40V
Transition Frequency ft:
300MHz
Power Dissipation Pd:
800mW
DC Collector Current:
800mA
DC Current Gain hFE:
300hFE
Transistor Case Style:
TO-18
No. of Pins:
3Pins
Operating Temperature Max:
200°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
To Be Advised

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Applications

  • Audio;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

Associated Products