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NTE108 - 

Bipolar - RF Transistor, NPN, 15 V, 600 MHz, 625 mW, 50 mA, 20 hFE

NTE108 - Bipolar - RF Transistor, NPN, 15 V, 600 MHz, 625 mW, 50 mA, 20 hFE
NTE108 - Bipolar - RF Transistor, NPN, 15 V, 600 MHz, 625 mW, 50 mA, 20 hFE

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Manufacturer Part No:
NTE108
Newark Part No.:
29C4417
Technical Datasheet:
(EN)
See all Technical Docs

Product Overview

The NTE108 is a silicon NPN Transistor designed for low noise, high frequency amplifiers, 1GHz local oscillator, non neutralized IF amplifiers and non saturating circuits with rise and fall time less than 2.5ns.
  • 83.3°C/W Junction-to-case thermal resistance
  • 200°C/W Junction-to-ambient thermal resistance

Applications

RF Communications

Product Information

:
NPN
:
15V
:
600MHz
:
625mW
:
50mA
:
20hFE
:
TO-92
:
3Pins
:
150°C
:
-
:
-
:
MSL 1 - Unlimited
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