NTE ELECTRONICS  NTE108  Bipolar - RF Transistor, NPN, 15 V, 600 MHz, 625 mW, 50 mA, 20

NTE ELECTRONICS NTE108

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Product Overview


The NTE108 is a silicon NPN Transistor designed for low noise, high frequency amplifiers, 1GHz local oscillator, non neutralized IF amplifiers and non saturating circuits with rise and fall time less than 2.5ns.
  • 83.3°C/W Junction-to-case thermal resistance
  • 200°C/W Junction-to-ambient thermal resistance

Applications

RF Communications
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Product Specifications, Documents & More


  • Collector Emitter Voltage V(br)ceo: 15V
  • DC Collector Current: 50mA
  • DC Current Gain hFE: 20
  • MSL: MSL 1 - Unlimited
  • No. of Pins: 3
  • Operating Temperature Max: 150°C
  • Operating Temperature Min: -55°C
  • Power Dissipation Pd: 625mW
  • RF Transistor Case: TO-92
  • SVHC: To Be Advised
  • Transistor Polarity: NPN
  • Transition Frequency Typ ft: 600MHz

Availability

Availability:  55


  • 55 in stock for same day shipping
 
Check stock and lead times
    More stock available week commencing 6/20/16

Price for: Each 1

Minimum order quantity: 1

Order multiple quantity: 1

Price: $1.94 $1.94

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Price

Quantity List Price
1 - 99 $1.94
100 - 499 $1.82
500 - 999 $1.79
1000 - 1999 $1.74
2000+ $1.66
 
 
Low

Legislation and Environmental


  • Moisture Sensitivity Level: MSL 1 - Unlimited
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