NTE ELECTRONICS  NTE108  Bipolar - RF Transistor, NPN, 15 V, 600 MHz, 625 mW, 50 mA, 20

NTE ELECTRONICS NTE108

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Product Overview


The NTE108 is a silicon NPN Transistor designed for low noise, high frequency amplifiers, 1GHz local oscillator, non neutralized IF amplifiers and non saturating circuits with rise and fall time less than 2.5ns.
  • 83.3°C/W Junction-to-case thermal resistance
  • 200°C/W Junction-to-ambient thermal resistance

Applications

RF Communications
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Product Information


  • Transistor Polarity NPN
  • Collector Emitter Voltage V(br)ceo 15V
  • Transition Frequency ft 600MHz
  • Power Dissipation Pd 625mW
  • DC Collector Current 50mA
  • DC Current Gain hFE 20
  • RF Transistor Case TO-92
  • No. of Pins 3Pins
  • Operating Temperature Max 150°C
  • MSL MSL 1 - Unlimited
  • Operating Temperature Min -55 °C
  • SVHC To Be Advised

Availability

Availability:  185


  • 185 in stock for same day shipping
 
Check stock and lead times
    More stock available week commencing 5/16/16

Price for: Each

Minimum order quantity: 1

Order multiple quantity: 1

Price: $1.94 $1.94

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Price

Quantity List Price
1 - 99 $1.94
100 - 499 $1.82
500 - 999 $1.79
1000 - 1999 $1.74
2000+ $1.66
 
 
Low

Legislation and Environmental


  • Moisture Sensitivity Level: MSL 1 - Unlimited
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