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NTE ELECTRONICS  NTE108  Bipolar - RF Transistor, NPN, 15 V, 600 MHz, 625 mW, 50 mA, 20 hFE

NTE ELECTRONICS NTE108

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NTE ELECTRONICS NTE108

Product Overview

The NTE108 is a silicon NPN Transistor designed for low noise, high frequency amplifiers, 1GHz local oscillator, non neutralized IF amplifiers and non saturating circuits with rise and fall time less than 2.5ns.
  • 83.3°C/W Junction-to-case thermal resistance
  • 200°C/W Junction-to-ambient thermal resistance

Applications

RF Communications

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Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
15V
Transition Frequency ft:
600MHz
Power Dissipation Pd:
625mW
DC Collector Current:
50mA
DC Current Gain hFE:
20hFE
RF Transistor Case:
TO-92
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited

Applications

  • RF Communications

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