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NTE ELECTRONICS  MJ10012  Bipolar (BJT) Single Transistor, NPN, 400 V, 175 W, 10 A, 300 hFE

NTE ELECTRONICS MJ10012
Technical Data Sheet (56.65KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The MJ10012 is a 400V Silicon NPN Darlington Transistor designed for high voltage, high speed and power switching in inductive circuits where fall time is critical. The NTE98 is particularly suited for line operated switch mode applications.
  • HV Darlington power amplifier/switch

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
400V
Transition Frequency ft:
-
Power Dissipation Pd:
175W
DC Collector Current:
10A
DC Current Gain hFE:
300hFE
Transistor Case Style:
TO-3
No. of Pins:
2Pins
Operating Temperature Max:
200°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
To Be Advised

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Applications

  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

Associated Products