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2N7000 - 

MOSFET Transistor, N Channel, 200 mA, 60 V, 1.2 ohm, 10 V, 800 mV

NTE ELECTRONICS 2N7000

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Manufacturer Part No:
2N7000
Newark Part No.:
33C8339
Technical Datasheet:
(EN)
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Product Information

:
350mW
:
800mV
:
-
:
150°C
:
200mA
:
3Pins
:
10V
:
N Channel
:
-
:
TO-92
:
1.2ohm
:
60V
:
MSL 1 - Unlimited
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Product Overview

The 2N7000 is a N-channel enhancement-mode MOSFET for use with high speed switching applications.
  • High density cell design for low static drain-to-source ON-resistance
  • Voltage controlled small signal switch
  • Rugged and reliable
  • High saturation current capability

Applications

Power Management

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MOSFET Transistor, N Channel, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V

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