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NTE ELECTRONICS  2N7000  MOSFET Transistor, N Channel, 200 mA, 60 V, 1.2 ohm, 10 V, 800 mV

NTE ELECTRONICS 2N7000
Technical Data Sheet (63.34KB) EN See all Technical Docs

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Product Overview

The 2N7000 is a N-channel enhancement-mode MOSFET for use with high speed switching applications.
  • High density cell design for low static drain-to-source ON-resistance
  • Voltage controlled small signal switch
  • Rugged and reliable
  • High saturation current capability

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
200mA
Drain Source Voltage Vds:
60V
On Resistance Rds(on):
1.2ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
800mV
Power Dissipation Pd:
350mW
Transistor Case Style:
TO-92
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Applications

  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

MOSFET Transistor, N Channel, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V

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