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NTE ELECTRONICS  2N4400  Bipolar (BJT) Single Transistor, NPN, 40 V, 250 MHz, 625 mW, 600 mA, 50 hFE

NTE ELECTRONICS 2N4400
Technical Data Sheet (59.10KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The 2N4400 is a 40V NPN silicon Transistor capable of 625mW power dissipation and 600mA collector current. The NTE123AP is designed for audio amplifier and switching applications. It is complementary to NTE159.
  • 60V Collector to base voltage (VCBO)
  • 6V Emitter to base voltage (VEBO)
  • 83.3°C/W Thermal resistance, junction to case
  • 200°C/W Thermal resistance, junction to ambient

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
40V
Transition Frequency ft:
250MHz
Power Dissipation Pd:
625mW
DC Collector Current:
600mA
DC Current Gain hFE:
50hFE
Transistor Case Style:
TO-92
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Applications

  • Audio;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

Associated Products