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2N4400 - 

Bipolar (BJT) Single Transistor, NPN, 40 V, 250 MHz, 625 mW, 600 mA, 50 hFE

2N4400 - Bipolar (BJT) Single Transistor, NPN, 40 V, 250 MHz, 625 mW, 600 mA, 50 hFE

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Manufacturer Part No:
2N4400
Newark Part No.:
33C8269
Technical Datasheet:
(EN)
See all Technical Docs

Product Overview

The 2N4400 is a 40V NPN silicon Transistor capable of 625mW power dissipation and 600mA collector current. The NTE123AP is designed for audio amplifier and switching applications. It is complementary to NTE159.
  • 60V Collector to base voltage (VCBO)
  • 6V Emitter to base voltage (VEBO)
  • 83.3°C/W Thermal resistance, junction to case
  • 200°C/W Thermal resistance, junction to ambient

Applications

Audio, Industrial

Product Information

:
NPN
:
40V
:
250MHz
:
625mW
:
600mA
:
50hFE
:
TO-92
:
3Pins
:
150°C
:
-
:
-
:
-
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