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NTE ELECTRONICS  2N4400  Bipolar (BJT) Single Transistor, NPN, 40 V, 250 MHz, 625 mW, 600 mA, 50 hFE

NTE ELECTRONICS 2N4400
Manufacturer Part No:
2N4400
Newark Part No.:
33C8269
Technical Datasheet:
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Product Overview

The 2N4400 is a 40V NPN silicon Transistor capable of 625mW power dissipation and 600mA collector current. The NTE123AP is designed for audio amplifier and switching applications. It is complementary to NTE159.
  • 60V Collector to base voltage (VCBO)
  • 6V Emitter to base voltage (VEBO)
  • 83.3°C/W Thermal resistance, junction to case
  • 200°C/W Thermal resistance, junction to ambient

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
40V
Transition Frequency ft:
250MHz
Power Dissipation Pd:
625mW
DC Collector Current:
600mA
DC Current Gain hFE:
50hFE
Transistor Case Style:
TO-92
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
SVHC:
To Be Advised

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Applications

  • Audio
  • Industrial

Legislation and Environmental

RoHS Compliant:
Yes
Authorized Distributor

Associated Products