NTE ELECTRONICS  2N4400  Bipolar (BJT) Single Transistor, NPN, 40 V, 250 MHz, 625 mW, 600 mA, 50


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Product Overview

The 2N4400 is a 40V NPN silicon Transistor capable of 625mW power dissipation and 600mA collector current. The NTE123AP is designed for audio amplifier and switching applications. It is complementary to NTE159.
  • 60V Collector to base voltage (VCBO)
  • 6V Emitter to base voltage (VEBO)
  • 83.3°C/W Thermal resistance, junction to case
  • 200°C/W Thermal resistance, junction to ambient


Audio; Industrial
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Product Information

  • Transistor Polarity NPN
  • Collector Emitter Voltage V(br)ceo 40V
  • Transition Frequency ft 250MHz
  • Power Dissipation Pd 625mW
  • DC Collector Current 600mA
  • DC Current Gain hFE 50
  • Transistor Case Style TO-92
  • No. of Pins 3Pins
  • Operating Temperature Max 150°C
  • MSL -
  • Operating Temperature Min -55 °C
  • SVHC To Be Advised


Availability:  2,168

  • 2,168 in stock for same day shipping
Check stock and lead times
    More stock available week commencing 5/9/16

Price for: Each

Minimum order quantity: 1

Order multiple quantity: 1

Price: $0.142 $0.142



Quantity List Price
1 - 99 $0.142
100 - 499 $0.134
500 - 999 $0.131
1000 - 1999 $0.128
2000+ $0.122

Legislation and Environmental

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