Low

2N4126 - 

Bipolar (BJT) Single Transistor, PNP, -25 V, 250 MHz, 625 mW, -200 mA, 120 hFE

NTE ELECTRONICS 2N4126

The actual product may differ from image shown

Manufacturer Part No:
2N4126
Newark Part No.:
55R1331
Technical Datasheet:
(EN)
See all Technical Docs

Product Overview

The 2N4126 is a -25V PNP silicon Transistor capable of 625mW power dissipation and 800mA collector current. The NTE159 is designed for audio amplifier and switching applications. It is complementary to NTE123AP.
  • -80V Collector to base voltage (VCBO)
  • -5V Emitter to base voltage (VEBO)
  • 83.3°C/W Thermal resistance, junction to case
  • 200°C/W Thermal resistance, junction to ambient

Applications

Audio, Industrial

Product Information

:
PNP
:
-25V
:
250MHz
:
625mW
:
-200mA
:
120hFE
:
TO-92
:
3Pins
:
150°C
:
-
:
-
:
MSL 1 - Unlimited
Find similar products Choose and modify the attributes above to find similar products.

Associated Products

Related Searches

US continental orders over $49 and under 50 pounds may qualify for free ground shipping. Click the link for the full Terms and Conditions of the offer.

1,438 In stock

for same day shipping

see cut-off times
 
Check stock and lead times
More stock available week commencing 8/14/17
$0.176 $ 0.18
Price for:
Each
Multiple: 1 Minimum: 1
Quantity Price
1 + $0.176
50 + $0.161
100 + $0.15
500 + $0.142
1000 + $0.135
No longer stocked:: No Longer Manufactured::
Add to Cart
Total Price:
Total Price: ( )
Total Price: --

Customer Reviews

Customer Q&A Exchange

Community

Like to see information about this product from other customers?

 Read discussions, blogs, documents from our community members.

Filters:

Post a question to one of our experts or start a discussion and get responses from supplier experts and fellow engineers in our community.