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NTE ELECTRONICS  2N4126  Bipolar (BJT) Single Transistor, PNP, -25 V, 250 MHz, 625 mW, -200 mA, 120 hFE

NTE ELECTRONICS 2N4126
Technical Data Sheet (57.98KB) EN See all Technical Docs

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Product Overview

The 2N4126 is a -25V PNP silicon Transistor capable of 625mW power dissipation and 800mA collector current. The NTE159 is designed for audio amplifier and switching applications. It is complementary to NTE123AP.
  • -80V Collector to base voltage (VCBO)
  • -5V Emitter to base voltage (VEBO)
  • 83.3°C/W Thermal resistance, junction to case
  • 200°C/W Thermal resistance, junction to ambient

 

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-25V
Transition Frequency ft:
250MHz
Power Dissipation Pd:
625mW
DC Collector Current:
-200mA
DC Current Gain hFE:
120hFE
Transistor Case Style:
TO-92
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-65 °C
SVHC:
To Be Advised

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Applications

  • Audio;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
RoHS Compliant:
Yes
Authorized Distributor

Associated Products