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2N3906 - 

Bipolar - RF Transistor, PNP, 80 V, 625 mW, 800 mA, 250 hFE

NTE ELECTRONICS 2N3906

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Manufacturer Part No:
2N3906
Newark Part No.:
21M5203
Technical Datasheet:
(EN)
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Product Information

:
625mW
:
TO-92
:
-
:
80V
:
-
:
150°C
:
3Pins
:
PNP
:
250hFE
:
-
:
800mA
:
MSL 1 - Unlimited
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Product Overview

The 2N3906 is a PNP silicon bipolar RF Transistor designed for general purpose applications.
  • 40V Collector-emitter voltage
  • 40V Collector-base voltage
  • 5V Emitter-base voltage
  • 200mA Continuous collector current

Applications

Industrial, RF Communications, Power Management

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FAIRCHILD SEMICONDUCTOR

Bipolar (BJT) Single Transistor, PNP, -40 V, 250 MHz, 625 mW, -200 mA, 30 hFE

14,264 in stock

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