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NTE ELECTRONICS  2N3906  Bipolar - RF Transistor, PNP, 80 V, 625 mW, 800 mA, 250 hFE

NTE ELECTRONICS 2N3906
Technical Data Sheet (60.47KB) EN See all Technical Docs

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Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
80V
Transition Frequency ft:
-
Power Dissipation Pd:
625mW
DC Collector Current:
800mA
DC Current Gain hFE:
250hFE
RF Transistor Case:
TO-92
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
RoHS Compliant:
Yes

Substitutes

Bipolar (BJT) Single Transistor, PNP, -40 V, 250 MHz, 625 mW, -200 mA, 30 hFE

FAIRCHILD SEMICONDUCTOR

8,195: 

Price for: Each

1+ $0.191 10+ $0.173 100+ $0.061 1000+ $0.042 More pricing

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Bipolar (BJT) Single Transistor, PNP, -40 V, 250 MHz, 625 mW, -200 mA, 30

FAIRCHILD SEMICONDUCTOR

Awaiting Delivery
Contact us for more availability or to purchase on backorder

Price for: Each

1+ $0.061 250+ $0.046 500+ $0.041 1000+ $0.037 More pricing

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Bipolar (BJT) Single Transistor, High Speed Switching, PNP, 40 V, 250 MHz, 625 mW, 200 mA, 100 hFE

MULTICOMP

12,770: 

Price for: Each

1+ $0.275 10+ $0.226 100+ $0.086 1000+ $0.058

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