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NTE ELECTRONICS  2N3906  Bipolar - RF Transistor, PNP, 80 V, 625 mW, 800 mA, 250 hFE

NTE ELECTRONICS 2N3906
Technical Data Sheet (60.47KB) EN See all Technical Docs

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Product Overview

The 2N3906 is a PNP silicon bipolar RF Transistor designed for general purpose applications.
  • 40V Collector-emitter voltage
  • 40V Collector-base voltage
  • 5V Emitter-base voltage
  • 200mA Continuous collector current

 

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
80V
Transition Frequency ft:
-
Power Dissipation Pd:
625mW
DC Collector Current:
800mA
DC Current Gain hFE:
250hFE
RF Transistor Case:
TO-92
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Applications

  • Industrial;
  • RF Communications;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
RoHS Compliant:
Yes
Authorized Distributor

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