NTE ELECTRONICS  2N3584  Bipolar (BJT) Single Transistor, NPN, 350 V, 35 W, 5 A, 100


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Product Overview

The 2N3584 is a Multiple Epitaxial Silicon NPN Power Transistor utilizing a multiple emitter site structure. Multiple epitaxial construction maximizes the volt-ampere characteristic of the device and provides fast switching speeds. Multiple emitter design ensures uniform current flow throughout the structure, which produces a high IS/b and a large safe operation area. The NTE384 is characterized for use in inverters operating directly from a rectified 110V power line. The leakage current is specified at 450V, therefore the device can also be used in a series bridge configuration on a 220V line. The VEBO rating of 9V eases requirements on the drive transformer in inverter applications.
  • Maximum safe area of operation
  • Low saturation voltages
  • High voltage rating
  • High dissipation rating
  • High voltage power amp/switch


Power Management
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Product Information

  • Transistor Polarity NPN
  • Collector Emitter Voltage V(br)ceo 350V
  • Transition Frequency ft -
  • Power Dissipation Pd 35W
  • DC Collector Current 5A
  • DC Current Gain hFE 100
  • Transistor Case Style TO-66
  • No. of Pins 2Pins
  • Operating Temperature Max 200°C
  • MSL -
  • Operating Temperature Min -65 °C
  • SVHC To Be Advised


Availability:  154

Supplier Direct Ship  Continental US Only

Ships within 2-3 business days for in stock items

Price for: Each

Minimum order quantity: 1

Order multiple quantity: 1

Price: $3.26 $3.26



Quantity List Price
1 - 49 $3.26
50 - 99 $3.10
100 - 499 $3.04
500 - 999 $2.95
1000+ $2.80

Legislation and Environmental

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