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2N3584 - 

Bipolar (BJT) Single Transistor, NPN, 350 V, 35 W, 5 A, 100 hFE

NTE ELECTRONICS 2N3584

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Manufacturer Part No:
2N3584
Newark Part No.:
58R9961
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
35W
:
-
:
350V
:
-
:
200°C
:
2Pins
:
NPN
:
100hFE
:
-
:
5A
:
TO-66
:
-
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Product Overview

The 2N3584 is a Multiple Epitaxial Silicon NPN Power Transistor utilizing a multiple emitter site structure. Multiple epitaxial construction maximizes the volt-ampere characteristic of the device and provides fast switching speeds. Multiple emitter design ensures uniform current flow throughout the structure, which produces a high IS/b and a large safe operation area. The NTE384 is characterized for use in inverters operating directly from a rectified 110V power line. The leakage current is specified at 450V, therefore the device can also be used in a series bridge configuration on a 220V line. The VEBO rating of 9V eases requirements on the drive transformer in inverter applications.
  • Maximum safe area of operation
  • Low saturation voltages
  • High voltage rating
  • High dissipation rating
  • High voltage power amp/switch

Applications

Power Management

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