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NTE ELECTRONICS  2N3584  Bipolar (BJT) Single Transistor, NPN, 350 V, 35 W, 5 A, 100 hFE

NTE ELECTRONICS 2N3584
Technical Data Sheet (22.54KB) EN See all Technical Docs

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Product Overview

The 2N3584 is a Multiple Epitaxial Silicon NPN Power Transistor utilizing a multiple emitter site structure. Multiple epitaxial construction maximizes the volt-ampere characteristic of the device and provides fast switching speeds. Multiple emitter design ensures uniform current flow throughout the structure, which produces a high IS/b and a large safe operation area. The NTE384 is characterized for use in inverters operating directly from a rectified 110V power line. The leakage current is specified at 450V, therefore the device can also be used in a series bridge configuration on a 220V line. The VEBO rating of 9V eases requirements on the drive transformer in inverter applications.
  • Maximum safe area of operation
  • Low saturation voltages
  • High voltage rating
  • High dissipation rating
  • High voltage power amp/switch

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
350V
Transition Frequency ft:
-
Power Dissipation Pd:
35W
DC Collector Current:
5A
DC Current Gain hFE:
100hFE
Transistor Case Style:
TO-66
No. of Pins:
2Pins
Operating Temperature Max:
200°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
To Be Advised

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Applications

  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

Bipolar (BJT) Single Transistor, NPN, 200 V, 52.5 W, 5 A, 40 hFE

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