NTE ELECTRONICS  2N3584  Bipolar (BJT) Single Transistor, NPN, 350 V, 35 W, 5 A, 100


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Product Overview

The 2N3584 is a Multiple Epitaxial Silicon NPN Power Transistor utilizing a multiple emitter site structure. Multiple epitaxial construction maximizes the volt-ampere characteristic of the device and provides fast switching speeds. Multiple emitter design ensures uniform current flow throughout the structure, which produces a high IS/b and a large safe operation area. The NTE384 is characterized for use in inverters operating directly from a rectified 110V power line. The leakage current is specified at 450V, therefore the device can also be used in a series bridge configuration on a 220V line. The VEBO rating of 9V eases requirements on the drive transformer in inverter applications.
  • Maximum safe area of operation
  • Low saturation voltages
  • High voltage rating
  • High dissipation rating
  • High voltage power amp/switch


Power Management
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Product Specifications, Documents & More

  • Collector Emitter Voltage V(br)ceo: 350V
  • DC Collector Current: 5A
  • DC Current Gain hFE: 100
  • MSL: -
  • No. of Pins: 2
  • Operating Temperature Max: 200°C
  • Operating Temperature Min: -65°C
  • Power Dissipation Pd: 35W
  • SVHC: No SVHC (17-Dec-2014)
  • Transistor Case Style: TO-66
  • Transistor Polarity: NPN
  • Transition Frequency Typ ft: -


Availability:  0

    More stock available week commencing 3/7/16

Non-Cancelable / Non Returnable

Price for: Each 1

Minimum order quantity: 1

Order multiple quantity: 1

Price: $3.26 $3.26



Quantity List Price
1 - 49 $3.26
50 - 99 $3.10
100 - 499 $3.04
500 - 999 $2.95
1000+ $2.80

Legislation and Environmental

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