Low

NTE ELECTRONICS  2N3583  Bipolar (BJT) Single Transistor, NPN, 175 V, 20 MHz, 35 W, 1 A, 40 hFE

NTE ELECTRONICS 2N3583

Image is for illustrative purposes only. Please refer to product description.

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
175V
Transition Frequency ft:
20MHz
Power Dissipation Pd:
35W
DC Collector Current:
1A
DC Current Gain hFE:
40hFE
Transistor Case Style:
TO-66
No. of Pins:
2Pins
Operating Temperature Max:
200°C
Product Range:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
To Be Advised

Find similar products  grouped by common attribute

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes

Associated Products

Similar Products

Find products functionally similar to this one. Select one of the following links, and you will be taken to a product group page that presents all products in this category that share the given attribute.