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NTE ELECTRONICS  2N2222A  Bipolar (BJT) Single Transistor, NPN, 40 V, 300 MHz, 1.2 W, 800 mA, 100 hFE

NTE ELECTRONICS 2N2222A
Technical Data Sheet (33.10KB) EN See all Technical Docs

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Product Overview

The 2N2222A is a Silicon NPN Transistor with 50V collector emitter voltage and 800mA continuous collector current. The silicon NPN transistor is designed for use with small signal general purpose amplifier and switch.
  • 75V collector base voltage
  • 6V emitter base voltage
Stresses exceeding Absolute Maximum Ratings may damage the devices. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
40V
Transition Frequency ft:
300MHz
Power Dissipation Pd:
1.2W
DC Collector Current:
800mA
DC Current Gain hFE:
100hFE
Transistor Case Style:
TO-18
No. of Pins:
3Pins
Operating Temperature Max:
200°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
SVHC:
To Be Advised

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Applications

  • Industrial;
  • Signal Processing

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

Associated Products