Low

MULTICOMP  MC2N2906A  Bipolar (BJT) Single Transistor, PNP, -60 V, 200 MHz, 400 mW, -600 mA, 40 hFE

MULTICOMP MC2N2906A
Technical Data Sheet (261.87KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The MC2N2906A is a -60V PNP silicon planar High Speed Switching Transistor designed for switching and linear application DC and VHF amplifier applications. Fast switching devices exhibiting short turn-off and low saturation voltage characteristics.
  • -60V Collector to base voltage (VCBO)
  • -5V Emitter to base voltage (VEBO

 

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-60V
Transition Frequency ft:
200MHz
Power Dissipation Pd:
400mW
DC Collector Current:
-600mA
DC Current Gain hFE:
40hFE
Transistor Case Style:
TO-18
No. of Pins:
3Pins
Operating Temperature Max:
-
Product Range:
-
MSL:
-
SVHC:
To Be Advised

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Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes

Associated Products

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