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MULTICOMP  BDX33C  Bipolar (BJT) Single Transistor, Darlington, NPN, 100 V, 70 W, 10 A, 750 hFE

MULTICOMP BDX33C
MULTICOMP BDX33C
Technical Data Sheet (157.12KB) EN See all Technical Docs

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MULTICOMP BDX33C
MULTICOMP BDX33C

Product Overview

The BDX33C is a 100V NPN Darlington Transistor having monolithic construction with built-in base-emitter shunt resistor.
  • Collector-emitter sustaining voltage (Vceo (sus) = 100V minimum)
  • Collector-base voltage(Vcbo = 100V)
  • Emitter-base voltage(Vebo = 5V)

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
100V
Transition Frequency ft:
-
Power Dissipation Pd:
70W
DC Collector Current:
10A
DC Current Gain hFE:
750hFE
Transistor Case Style:
TO-220
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Y-Ex

Substitutes

Bipolar (BJT) Single Transistor, Darlington, NPN, 100 V, 70 W, 10 A, 750

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BDX33C

TRANSISTOR,BJT,DARLINGTON,NPN,100V V(BR)CEO,10A I(C),TO-220AB

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Bipolar (BJT) Single Transistor, Darlington, NPN, 100 V, 70 W, 10 A, 750

STMICROELECTRONICS

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