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MULTICOMP  BC141-16  Bipolar (BJT) Single Transistor, General Purpose, NPN, 60 V, 50 MHz, 800 mW, 1 A, 30 hFE

MULTICOMP BC141-16

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Product Overview

The BC141-16 from Multicomp are through hole, NPN medium power, silicon planar epitaxial transistors in TO-39 metal can package. This device is used for switching and amplification.
  • Collector emitter voltage (Vce) of 60V
  • Continuous collector current (Ic) of 1A
  • Power dissipation of 800mW
  • Operating junction temperature range from -65°C to 200°C
  • Collector emitter saturation voltage of 1V at Ic=1A
  • DC current gain of 40 at Ic=100mA

Applications

Signal Processing; Power Management; Portable Devices; Consumer Electronics; Industrial

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Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
60V
Transition Frequency ft:
50MHz
Power Dissipation Pd:
800mW
DC Collector Current:
1A
DC Current Gain hFE:
30hFE
Transistor Case Style:
TO-39
No. of Pins:
3Pins
Operating Temperature Max:
200°C
Product Range:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
To Be Advised

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Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes

Applications

  • Signal Processing;
  • Power Management;
  • Portable Devices;
  • Consumer Electronics;
  • Industrial

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