Low

BC108 - 

Bipolar (BJT) Single Transistor, General Purpose, NPN, 25 V, 150 MHz, 600 mW, 200 mA, 110 hFE

MULTICOMP BC108

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Manufacturer:
MULTICOMP MULTICOMP
Manufacturer Part No:
BC108
Newark Part No.:
13M4851
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
600mW
:
-
:
25V
:
150MHz
:
200°C
:
3Pins
:
NPN
:
110hFE
:
-
:
200mA
:
TO-18
:
-
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Product Overview

The BC108 from Multicomp are through hole, NPN low power, silicon planar epitaxial transistors in TO-18 metal can package. This device is used for switching and amplification.
  • Collector emitter voltage (Vce) of 25V
  • Continuous collector current (Ic) of 200mA
  • Power dissipation of 600mW
  • Operating junction temperature range from -65°C to 200°C
  • Collector emitter saturation voltage of 600mV at Ic=100mA
  • DC current gain of 40 at Ic=10µA

Applications

Signal Processing, Power Management, Portable Devices, Consumer Electronics, Industrial

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