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MULTICOMP  BC108  Bipolar (BJT) Single Transistor, General Purpose, NPN, 25 V, 150 MHz, 600 mW, 200 mA, 110 hFE

MULTICOMP BC108
Technical Data Sheet (1.73MB) EN See all Technical Docs

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Product Overview

The BC108 from Multicomp are through hole, NPN low power, silicon planar epitaxial transistors in TO-18 metal can package. This device is used for switching and amplification.
  • Collector emitter voltage (Vce) of 25V
  • Continuous collector current (Ic) of 200mA
  • Power dissipation of 600mW
  • Operating junction temperature range from -65°C to 200°C
  • Collector emitter saturation voltage of 600mV at Ic=100mA
  • DC current gain of 40 at Ic=10µA

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
25V
Transition Frequency ft:
150MHz
Power Dissipation Pd:
600mW
DC Collector Current:
200mA
DC Current Gain hFE:
110hFE
Transistor Case Style:
TO-18
No. of Pins:
3Pins
Operating Temperature Max:
200°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
To Be Advised

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Applications

  • Signal Processing;
  • Power Management;
  • Portable Devices;
  • Consumer Electronics;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

Associated Products