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MULTICOMP  2N5682  Bipolar (BJT) Single Transistor, NPN, 120 V, 30 MHz, 1 W, 1 A, 150 hFE

MULTICOMP 2N5682
Technical Data Sheet (253.23KB) EN See all Technical Docs

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Product Overview

The 2N5682 is an NPN silicon planer epitaxial Metal Transistor designed for use as drivers for high power transistors in general purpose amplifier and switching circuits.

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
120V
Transition Frequency ft:
30MHz
Power Dissipation Pd:
1W
DC Collector Current:
1A
DC Current Gain hFE:
150hFE
Transistor Case Style:
TO-39
No. of Pins:
3Pins
Operating Temperature Max:
200°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
To Be Advised

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Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

Bipolar (BJT) Single Transistor, NPN, 4 V, 30 MHz, 10 W, 1 A, 40 hFE

NTE ELECTRONICS

51:  in stock

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1+ $4.08 50+ $3.71 100+ $3.39 250+ $3.13 More pricing

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