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MULTICOMP  2N5681  Bipolar (BJT) Single Transistor, NPN, 100 V, 30 MHz, 1 W, 1 A, 150 hFE

MULTICOMP 2N5681
Technical Data Sheet (228.96KB) EN See all Technical Docs

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Product Overview

The 2N5681 is a 100V Silicon NPN Bipolar Epitaxial Planar Transistor designed for use as drivers for high power transistors in general purpose amplifier and switching circuits.
  • Collector-base voltage(Vcbo = 100V)
  • Emitter-base voltage(Vebo = 4V)

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
100V
Transition Frequency ft:
30MHz
Power Dissipation Pd:
1W
DC Collector Current:
1A
DC Current Gain hFE:
150hFE
Transistor Case Style:
TO-39
No. of Pins:
3Pins
Operating Temperature Max:
200°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
To Be Advised

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Applications

  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

Associated Products