MULTICOMP  2N5681  Bipolar (BJT) Single Transistor, NPN, 100 V, 30 MHz, 1 W, 1 A, 150


Image is for illustrative purposes only. Please refer to product description.

  • Manufacturer:
  • Newark Part No.: 35C0730
  • Manufacturer Part No 2N5681

Product Overview

The 2N5681 is a 100V Silicon NPN Bipolar Epitaxial Planar Transistor designed for use as drivers for high power transistors in general purpose amplifier and switching circuits.
  • Collector-base voltage(Vcbo = 100V)
  • Emitter-base voltage(Vebo = 4V)


Back to top

Product Information

  • Transistor Polarity NPN
  • Collector Emitter Voltage V(br)ceo 100V
  • Transition Frequency ft 30MHz
  • Power Dissipation Pd 1W
  • DC Collector Current 1A
  • DC Current Gain hFE 150
  • Transistor Case Style TO-39
  • No. of Pins 3Pins
  • Operating Temperature Max 200°C
  • MSL -
  • Operating Temperature Min -65 °C
  • SVHC No SVHC (15-Jun-2015)


Availability:  640

  • 640 in stock for same day shipping
Check stock and lead times
    More stock available week commencing 5/16/16

Price for: Each

Minimum order quantity: 1

Order multiple quantity: 1

Price: $2.05 $2.05



Quantity List Price
1 - 99 $2.05
100 - 249 $1.82
250 - 499 $1.67
500 - 999 $1.52
1000 - 2499 $1.36
2500 - 4999 $1.25
5000+ $1.14

Legislation and Environmental

Back to top

Similar Products

Find products functionally similar to this one. Select one of the following links, and you will be taken to a product group page that presents all products in this category that share the given attribute.

Customer Reviews

Customer Q&A Exchange


Like to see information about this product from other customers?

 Read discussions, blogs, documents from our community members.


Post a question to one of our experts or start a discussion and get responses from supplier experts and fellow engineers in our community.

Associated Products

Customers Also Bought