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MULTICOMP  2N5680  Bipolar (BJT) Single Transistor, PNP, -120 V, 30 MHz, 1 W, -1 A, 40 hFE

MULTICOMP 2N5680
Technical Data Sheet (186.46KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The 2N5680 is a -120V Silicon PNP Epitaxial Planar High Voltage Transistor intended for use as drivers for high power transistors in general purpose amplifier and switching circuit.
  • Collector-base voltage(Vcbo = -120V)
  • Emitter-base voltage(Vebo = -4V)

 

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-120V
Transition Frequency ft:
30MHz
Power Dissipation Pd:
1W
DC Collector Current:
-1A
DC Current Gain hFE:
40hFE
Transistor Case Style:
TO-39
No. of Pins:
3Pins
Operating Temperature Max:
200°C
Product Range:
-
MSL:
-
SVHC:
To Be Advised

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Applications

  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes

Associated Products

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