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2N5551 - 

Bipolar (BJT) Single Transistor, NPN, 160 V, 300 MHz, 625 mW, 600 mA, 80 hFE

MULTICOMP 2N5551

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Manufacturer:
MULTICOMP MULTICOMP
Manufacturer Part No:
2N5551
Newark Part No.:
35C0727
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
625mW
:
-
:
160V
:
300MHz
:
150°C
:
3Pins
:
NPN
:
80hFE
:
-
:
600mA
:
TO-92
:
MSL 1 - Unlimited
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Product Overview

The 2N5551 is a 160V NPN Bipolar Transistor capable of 625mW power dissipation and 600mA collector current.
  • 180V Collector to base voltage (VCBO)
  • 6V Emitter to base voltage (VEBO)
  • 83.3°C/W Thermal resistance, junction to case
  • 200°C/W Thermal resistance, junction to ambient

Applications

Industrial

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