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MULTICOMP  2N5551  Bipolar (BJT) Single Transistor, NPN, 160 V, 300 MHz, 625 mW, 600 mA, 80 hFE

MULTICOMP 2N5551
Technical Data Sheet (234.07KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The 2N5551 is a 160V NPN Bipolar Transistor capable of 625mW power dissipation and 600mA collector current.
  • 180V Collector to base voltage (VCBO)
  • 6V Emitter to base voltage (VEBO)
  • 83.3°C/W Thermal resistance, junction to case
  • 200°C/W Thermal resistance, junction to ambient

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
160V
Transition Frequency ft:
300MHz
Power Dissipation Pd:
625mW
DC Collector Current:
600mA
DC Current Gain hFE:
80hFE
Transistor Case Style:
TO-92
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
RoHS Compliant:
Yes

Substitutes

Associated Products

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