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MULTICOMP  2N5401  Bipolar (BJT) Single Transistor, PNP, 150 V, 0.625 W, 600 mA, 50 hFE

MULTICOMP 2N5401
Technical Data Sheet (354.00KB) EN See all Technical Docs

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Product Overview

The 2N5401 is an Amplifier Transistor with collector-emitter voltage at 150V and collector dissipation at 625mW. This device features thermal shutdown and current limiting making the device remarkably rugged. In most applications, no external components are required for operation. Useful for on-card regulation or any other application where a regulated negative voltage at a modest current level is needed. This device offers a substantial advantage over the common resistor/zener diode approach.
  • No external components required
  • Internal short-circuit current limiting
  • Internal thermal overload protection

 

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
150V
Transition Frequency ft:
-
Power Dissipation Pd:
625mW
DC Collector Current:
600mA
DC Current Gain hFE:
50hFE
Transistor Case Style:
TO-92
No. of Pins:
3Pins
Operating Temperature Max:
70°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
0 °C
SVHC:
To Be Advised

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Applications

  • Audio

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
RoHS Compliant:
Yes
Authorized Distributor