Low

2N3906 - 

Bipolar (BJT) Single Transistor, High Speed Switching, PNP, 40 V, 250 MHz, 625 mW, 200 mA, 100 hFE

MULTICOMP 2N3906

The actual product may differ from image shown

Manufacturer:
MULTICOMP MULTICOMP
Manufacturer Part No:
2N3906
Newark Part No.:
08N8112
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
625mW
:
-
:
40V
:
250MHz
:
150°C
:
3Pins
:
PNP
:
100hFE
:
-
:
200mA
:
TO-92
:
MSL 1 - Unlimited
Find similar products Choose and modify the attributes above to find similar products.

Product Overview

The 2N3906 from Multicomp is a through hole, PNP low power, silicon planar switching transistors in TO-92 metal can package. This transistor features fast switching, hence is suitable for switching and amplification.
  • Collector emitter voltage (Vce) of -40V
  • Continuous collector current (Ic) of -200mA
  • Power dissipation of 625mW
  • Operating junction temperature range from -55°C to 150°C
  • Collector emitter saturation voltage is less than 400mV at Ic=10mA
  • DC current gain is greater than 30 at Ic=100mA

Applications

Signal Processing, Power Management, Portable Devices, Consumer Electronics, Industrial

Substitutes

Associated Products

Compare Selected