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2N3637 - 

Bipolar (BJT) Single Transistor, PNP, -175 V, 200 MHz, 1 W, 1 A, 50 hFE

2N3637 - Bipolar (BJT) Single Transistor, PNP, -175 V, 200 MHz, 1 W, 1 A, 50 hFE

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Manufacturer:
MULTICOMP MULTICOMP
Manufacturer Part No:
2N3637
Newark Part No.:
35C0705
Technical Datasheet:
(EN)
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Product Overview

The 2N3637 is a -175V PNP silicon epitaxial Planar Transistor designed for use as drivers for high power transistors in general purpose amplifier and switching circuits.
  • -175V Collector to base voltage (VCBO)
  • -5V Emitter to base voltage (VEBO
  • 60ns Fall time (VCC = 30V, IB2 = 15mA)
  • 175°C/W Thermal resistance, junction to ambient
  • 35°C/W Thermal resistance, junction to case

Applications

Industrial

Product Information

:
PNP
:
-175V
:
200MHz
:
1W
:
1A
:
50hFE
:
TO-39
:
3Pins
:
200°C
:
-
:
-
:
-
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