MULTICOMP  2N3637  Bipolar (BJT) Single Transistor, PNP, -175 V, 200 MHz, 1 W, 1 A, 50


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  • Manufacturer:
  • Newark Part No.: 35C0705
  • Manufacturer Part No 2N3637

Product Overview

The 2N3637 is a -175V PNP silicon epitaxial Planar Transistor designed for use as drivers for high power transistors in general purpose amplifier and switching circuits.
  • -175V Collector to base voltage (VCBO)
  • -5V Emitter to base voltage (VEBO
  • 60ns Fall time (VCC = 30V, IB2 = 15mA)
  • 175°C/W Thermal resistance, junction to ambient
  • 35°C/W Thermal resistance, junction to case


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Product Information

  • Transistor Polarity PNP
  • Collector Emitter Voltage V(br)ceo -175V
  • Transition Frequency ft 200MHz
  • Power Dissipation Pd 1W
  • DC Collector Current 1A
  • DC Current Gain hFE 50
  • Transistor Case Style TO-39
  • No. of Pins 3Pins
  • Operating Temperature Max 200°C
  • MSL -
  • Operating Temperature Min -65 °C
  • SVHC No SVHC (15-Jun-2015)


Availability:  294

  • 294 in stock for same day shipping
Check stock and lead times
    More stock available week commencing 5/23/16

Price for: Each

Minimum order quantity: 1

Order multiple quantity: 1

Price: $2.51 $2.51



Quantity List Price
1 - 99 $2.51
100 - 249 $2.22
250 - 499 $2.04
500 - 999 $1.86
1000 - 2499 $1.66
2500 - 4999 $1.51
5000+ $1.38

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