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MULTICOMP  2N3637  Bipolar (BJT) Single Transistor, PNP, -175 V, 200 MHz, 1 W, 1 A, 50 hFE

MULTICOMP 2N3637
Technical Data Sheet (203.47KB) EN See all Technical Docs

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Product Overview

The 2N3637 is a -175V PNP silicon epitaxial Planar Transistor designed for use as drivers for high power transistors in general purpose amplifier and switching circuits.
  • -175V Collector to base voltage (VCBO)
  • -5V Emitter to base voltage (VEBO
  • 60ns Fall time (VCC = 30V, IB2 = 15mA)
  • 175°C/W Thermal resistance, junction to ambient
  • 35°C/W Thermal resistance, junction to case

 

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-175V
Transition Frequency ft:
200MHz
Power Dissipation Pd:
1W
DC Collector Current:
1A
DC Current Gain hFE:
50hFE
Transistor Case Style:
TO-39
No. of Pins:
3Pins
Operating Temperature Max:
200°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
To Be Advised

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Applications

  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

Associated Products