Low

MULTICOMP  2N3501  Bipolar (BJT) Single Transistor, NPN, 150 V, 150 MHz, 1 W, 300 mA, 100 hFE

MULTICOMP 2N3501
Technical Data Sheet (213.66KB) EN See all Technical Docs

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Product Overview

The 2N3501 is a silicon power NPN Bipolar Transistor intended for used in low power amplifier and switching applications.
  • -65 to 200°C Operating junction temperature range

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
150V
Transition Frequency ft:
150MHz
Power Dissipation Pd:
1W
DC Collector Current:
300mA
DC Current Gain hFE:
100hFE
Transistor Case Style:
TO-39
No. of Pins:
3Pins
Operating Temperature Max:
200°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
To Be Advised

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Applications

  • Power Management;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

Associated Products