Low

MULTICOMP  2N3055H  Bipolar (BJT) Single Transistor, General Purpose, NPN, 60 V, 800 kHz, 115 W, 15 A, 20 hFE

MULTICOMP 2N3055H
Technical Data Sheet (284.50KB) EN See all Technical Docs

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Product Overview

The 2N3055H is a 60V Silicon Power Base Transistor for high power audio, series pass power supplies, disk-head positioners and other linear application. The transistor can also be used in power switching circuits such as converters or inverters.
  • Higher safe operating area
  • Low saturation voltages
  • High power dissipation capability

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
60V
Transition Frequency ft:
800kHz
Power Dissipation Pd:
115W
DC Collector Current:
15A
DC Current Gain hFE:
20hFE
Transistor Case Style:
TO-3
No. of Pins:
2Pins
Operating Temperature Max:
200°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
To Be Advised

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Applications

  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Y-Ex
Authorized Distributor

Substitutes

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