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SOLID STATE  2N3055  Bipolar (BJT) Single Transistor, General Purpose, NPN, 60 V, 800 kHz, 115 W, 15 A, 5 hFE

SOLID STATE 2N3055
SOLID STATE 2N3055
Technical Data Sheet (384.82KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

SOLID STATE 2N3055
SOLID STATE 2N3055

Product Overview

The 2N3055 from Multicomp is a through hole, NPN transistors in TO-3 metal can package. The device is suitable for switching and amplification.
  • Collector emitter voltage (Vce) of 60V
  • Continuous collector current (Ic) of 15A
  • Power dissipation of 115mW
  • Operating junction temperature range from -65°C to 150°C
  • Collector emitter saturation voltage of 3V at Ic=10A
  • DC current gain of 5 at Ic=10A

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
60V
Transition Frequency ft:
800kHz
Power Dissipation Pd:
115W
DC Collector Current:
15A
DC Current Gain hFE:
5hFE
Transistor Case Style:
TO-204AA
No. of Pins:
3Pins
Operating Temperature Max:
200°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
To Be Advised
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Applications

  • Signal Processing;
  • Power Management;
  • Portable Devices;
  • Consumer Electronics;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
  RoHS Certificate of Compliance
Independent Distributor

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