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MULTICOMP  2N3055  Bipolar (BJT) Single Transistor, General Purpose, NPN, 60 V, 800 kHz, 115 W, 15 A, 5 hFE

MULTICOMP 2N3055
MULTICOMP 2N3055
Technical Data Sheet (384.82KB) EN See all Technical Docs

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MULTICOMP 2N3055
MULTICOMP 2N3055

Product Overview

The 2N3055 from Multicomp is a through hole, NPN transistors in TO-3 metal can package. The device is suitable for switching and amplification.
  • Collector emitter voltage (Vce) of 60V
  • Continuous collector current (Ic) of 15A
  • Power dissipation of 115mW
  • Operating junction temperature range from -65°C to 150°C
  • Collector emitter saturation voltage of 3V at Ic=10A
  • DC current gain of 5 at Ic=10A

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
60V
Transition Frequency ft:
800kHz
Power Dissipation Pd:
115W
DC Collector Current:
15A
DC Current Gain hFE:
5hFE
Transistor Case Style:
TO-204AA
No. of Pins:
3Pins
Operating Temperature Max:
200°C
Product Range:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
To Be Advised

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Applications

  • Signal Processing;
  • Power Management;
  • Portable Devices;
  • Consumer Electronics;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes

Substitutes

Associated Products

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