Low

2N3055 - 

Bipolar (BJT) Single Transistor, General Purpose, NPN, 60 V, 800 kHz, 115 W, 15 A, 70 hFE

SOLID STATE 2N3055
SOLID STATE 2N3055

The actual product may differ from image shown

Manufacturer Part No:
2N3055
Newark Part No.:
35C0700
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
115W
:
-
:
60V
:
800kHz
:
200°C
:
3Pins
:
NPN
:
70hFE
:
-
:
15A
:
TO-204AA
:
-
Find similar products Choose and modify the attributes above to find similar products.

Product Overview

The 2N3055 from Multicomp is a through hole, NPN transistors in TO-3 metal can package. The device is suitable for switching and amplification.
  • Collector emitter voltage (Vce) of 60V
  • Continuous collector current (Ic) of 15A
  • Power dissipation of 115mW
  • Operating junction temperature range from -65°C to 150°C
  • Collector emitter saturation voltage of 3V at Ic=10A
  • DC current gain of 5 at Ic=10A

Applications

Signal Processing, Power Management, Portable Devices, Consumer Electronics, Industrial

Substitutes

Associated Products

Compare Selected