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2N2907A - 

Bipolar (BJT) Single Transistor, PNP, -60 V, 200 MHz, 400 mW, -600 mA, 50 hFE

2N2907A - Bipolar (BJT) Single Transistor, PNP, -60 V, 200 MHz, 400 mW, -600 mA, 50 hFE
2N2907A - Bipolar (BJT) Single Transistor, PNP, -60 V, 200 MHz, 400 mW, -600 mA, 50 hFE

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Manufacturer:
MULTICOMP MULTICOMP
Manufacturer Part No:
2N2907A
Newark Part No.:
35C0696
Technical Datasheet:
(EN)
See all Technical Docs

Product Overview

The 2N2907A from Multicomp is a through hole, silicon planar PNP high speed switching transistors in TO-18 metal can package. This transistor features fast switching, short turn off and low saturation voltage. The device is suitable for switching and amplification.
  • Collector emitter voltage (Vce) of -60V
  • Continuous collector current (Ic) of -600mA
  • Power dissipation of 400mW
  • Operating junction temperature range from -55°C to 175°C
  • Collector emitter saturation voltage of -1.3V at Ic=150mA
  • DC current gain is greater than 20 at Ic=500mA

Applications

Signal Processing, Power Management, Portable Devices, Consumer Electronics, Industrial

Product Information

:
PNP
:
-60V
:
200MHz
:
400mW
:
-600mA
:
50hFE
:
TO-18
:
3Pins
:
-
:
-
:
-
:
-
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Customer Reviews

MULTICOMP - 2N2907A - TRANSISTOR, PNP, -60V, -0.6A, TO-206AA 5 5 1 1
2N2907A Great quality and ship on time!! Pricing was very competitive. April 10, 2015
  • 2015-06-11T15:21:18.054-05:00
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