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MULTICOMP  2N2907A  Bipolar (BJT) Single Transistor, PNP, -60 V, 200 MHz, 400 mW, -600 mA, 50 hFE

MULTICOMP 2N2907A
MULTICOMP 2N2907A
Technical Data Sheet (293.07KB) EN See all Technical Docs

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MULTICOMP 2N2907A
MULTICOMP 2N2907A

Product Overview

The 2N2907A from Multicomp is a through hole, silicon planar PNP high speed switching transistors in TO-18 metal can package. This transistor features fast switching, short turn off and low saturation voltage. The device is suitable for switching and amplification.
  • Collector emitter voltage (Vce) of -60V
  • Continuous collector current (Ic) of -600mA
  • Power dissipation of 400mW
  • Operating junction temperature range from -55°C to 175°C
  • Collector emitter saturation voltage of -1.3V at Ic=150mA
  • DC current gain is greater than 20 at Ic=500mA

 

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-60V
Transition Frequency ft:
200MHz
Power Dissipation Pd:
400mW
DC Collector Current:
-600mA
DC Current Gain hFE:
50hFE
Transistor Case Style:
TO-18
No. of Pins:
3Pins
Operating Temperature Max:
-
Product Range:
-
MSL:
-
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Signal Processing;
  • Power Management;
  • Portable Devices;
  • Consumer Electronics;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes

Associated Products

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