Low

MULTICOMP  2N2905A  Bipolar (BJT) Single Transistor, PNP, -60 V, 3 W, -600 mA, 50 hFE

MULTICOMP 2N2905A
MULTICOMP 2N2905A
Technical Data Sheet (193.81KB) EN See all Technical Docs

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MULTICOMP 2N2905A
MULTICOMP 2N2905A

Product Overview

The 2N2905A from Multicomp is a through hole, silicon planar PNP transistors in TO-19 metal can package. This transistor features fast switching, short turn off and low saturation voltage hence the device is most suitable for switching and amplification.
  • Collector emitter voltage (Vce) of -60V
  • Continuous collector current (Ic) of -600mA
  • Power dissipation of 600mW
  • Operating junction temperature range from -65°C to 200°C
  • Collector emitter saturation voltage of -400mV at Ic=150mA
  • DC current gain is greater than 50 at Ic=500mA

 

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-60V
Transition Frequency ft:
-
Power Dissipation Pd:
3W
DC Collector Current:
-600mA
DC Current Gain hFE:
50hFE
Transistor Case Style:
TO-205AD
No. of Pins:
3Pins
Operating Temperature Max:
200°C
Product Range:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
To Be Advised

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Applications

  • Signal Processing;
  • Power Management;
  • Portable Devices;
  • Consumer Electronics;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes

Substitutes

Associated Products

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