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MULTICOMP  2N2905  Bipolar (BJT) Single Transistor, High Speed Switching, PNP, 40 V, 200 MHz, 3 W, 600 mA, 100 hFE

MULTICOMP 2N2905
Technical Data Sheet (145.40KB) EN See all Technical Docs

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Product Overview

The 2N2905 from Multicomp is a through hole, silicon planar PNP low power bipolar transistors in TO-39 metal can package. This are general purpose transistor suitable for switching applications.
  • Collector emitter voltage (Vce) of -40V
  • Continuous collector current (Ic) of -600mA
  • Power dissipation of 600mW
  • Operating junction temperature range from -65°C to 200°C
  • Collector emitter saturation voltage of -400mV at Ic=150mA
  • DC current gain is greater than 30 at Ic=500mA

 

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
40V
Transition Frequency ft:
200MHz
Power Dissipation Pd:
3W
DC Collector Current:
600mA
DC Current Gain hFE:
100hFE
Transistor Case Style:
TO-39
No. of Pins:
3Pins
Operating Temperature Max:
200°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
To Be Advised

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Applications

  • Signal Processing;
  • Power Management;
  • Portable Devices;
  • Consumer Electronics;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

Associated Products