Low

MULTICOMP  2N2905  Bipolar (BJT) Single Transistor, High Speed Switching, PNP, 40 V, 200 MHz, 3 W, 600 mA, 100 hFE

MULTICOMP 2N2905
Technical Data Sheet (145.40KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The 2N2905 from Multicomp is a through hole, silicon planar PNP low power bipolar transistors in TO-39 metal can package. This are general purpose transistor suitable for switching applications.
  • Collector emitter voltage (Vce) of -40V
  • Continuous collector current (Ic) of -600mA
  • Power dissipation of 600mW
  • Operating junction temperature range from -65°C to 200°C
  • Collector emitter saturation voltage of -400mV at Ic=150mA
  • DC current gain is greater than 30 at Ic=500mA

 

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
40V
Transition Frequency ft:
200MHz
Power Dissipation Pd:
3W
DC Collector Current:
600mA
DC Current Gain hFE:
100hFE
Transistor Case Style:
TO-39
No. of Pins:
3Pins
Operating Temperature Max:
200°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
To Be Advised

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Applications

  • Signal Processing;
  • Power Management;
  • Portable Devices;
  • Consumer Electronics;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

Associated Products