Low

2N2905 - 

Bipolar (BJT) Single Transistor, High Speed Switching, PNP, 40 V, 200 MHz, 3 W, 600 mA, 100 hFE

MULTICOMP 2N2905

The actual product may differ from image shown

Manufacturer:
MULTICOMP MULTICOMP
Manufacturer Part No:
2N2905
Newark Part No.:
98K6240
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
3W
:
-
:
40V
:
200MHz
:
200°C
:
3Pins
:
PNP
:
100hFE
:
-
:
600mA
:
TO-39
:
-
Find similar products Choose and modify the attributes above to find similar products.

Product Overview

The 2N2905 from Multicomp is a through hole, silicon planar PNP low power bipolar transistors in TO-39 metal can package. This are general purpose transistor suitable for switching applications.
  • Collector emitter voltage (Vce) of -40V
  • Continuous collector current (Ic) of -600mA
  • Power dissipation of 600mW
  • Operating junction temperature range from -65°C to 200°C
  • Collector emitter saturation voltage of -400mV at Ic=150mA
  • DC current gain is greater than 30 at Ic=500mA

Applications

Signal Processing, Power Management, Portable Devices, Consumer Electronics, Industrial

Associated Products

Compare Selected