Low

2N2369 - 

Bipolar (BJT) Single Transistor, Switching, NPN, 15 V, 500 MHz, 360 mW, 200 mA, 40 hFE

MULTICOMP 2N2369

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Manufacturer:
MULTICOMP MULTICOMP
Manufacturer Part No:
2N2369
Newark Part No.:
98K6238
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
360mW
:
-
:
15V
:
500MHz
:
200°C
:
3Pins
:
NPN
:
40hFE
:
-
:
200mA
:
TO-18
:
-
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Product Overview

The 2N2369 from Multicomp is a through hole, silicon planar epitaxial NPN high speed switching transistors in TO-18 metal can package. This transistor features fast switching, short turn off and low saturation voltage. Typical application are low power, high speed saturated switching.
  • Collector emitter voltage (Vce) of 15V
  • Continuous collector current (Ic) of 200mA
  • Power dissipation of 360mW
  • Operating junction temperature range from -65°C to 200°C
  • Collector emitter saturation voltage is less than 250mV at Ic=10mA
  • DC current gain is greater than 20 at Ic=100mA

Applications

Signal Processing, Power Management, Portable Devices, Consumer Electronics, Industrial

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