Low

MULTICOMP  2N2369  Bipolar (BJT) Single Transistor, Switching, NPN, 15 V, 500 MHz, 360 mW, 200 mA, 40 hFE

MULTICOMP 2N2369
Technical Data Sheet (263.74KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The 2N2369 from Multicomp is a through hole, silicon planar epitaxial NPN high speed switching transistors in TO-18 metal can package. This transistor features fast switching, short turn off and low saturation voltage. Typical application are low power, high speed saturated switching.
  • Collector emitter voltage (Vce) of 15V
  • Continuous collector current (Ic) of 200mA
  • Power dissipation of 360mW
  • Operating junction temperature range from -65°C to 200°C
  • Collector emitter saturation voltage is less than 250mV at Ic=10mA
  • DC current gain is greater than 20 at Ic=100mA

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
15V
Transition Frequency ft:
500MHz
Power Dissipation Pd:
360mW
DC Collector Current:
200mA
DC Current Gain hFE:
40hFE
Transistor Case Style:
TO-18
No. of Pins:
3Pins
Operating Temperature Max:
200°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
To Be Advised

Find similar products  grouped by common attribute

Applications

  • Signal Processing;
  • Power Management;
  • Portable Devices;
  • Consumer Electronics;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

Associated Products