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MULTICOMP  2N1711  Bipolar (BJT) Single Transistor, NPN, 50 V, 70 MHz, 800 mW, 500 mA, 300 hFE

MULTICOMP 2N1711
Technical Data Sheet (197.72KB) EN See all Technical Docs

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Product Overview

The 2N1711 is a NPN silicon Transistor for amplifier and switching applications. This device features high breakdown voltage, low leakage current, low capacity and beta useful over an extremely wide current range.
  • 75V Collector-Base Voltage
  • 7V Emitter-Base Voltage
  • 0.5A Continuous Collector Current

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
50V
Transition Frequency ft:
70MHz
Power Dissipation Pd:
800mW
DC Collector Current:
500mA
DC Current Gain hFE:
300hFE
Transistor Case Style:
TO-39
No. of Pins:
3Pins
Operating Temperature Max:
200°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
To Be Advised

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Applications

  • Audio;
  • Signal Processing

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

Associated Products