Low

2N4401 - 

Bipolar (BJT) Single Transistor, NPN, 40 V, 250 MHz, 625 mW, 600 mA, 300 hFE

MULTICOMP 2N4401

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Manufacturer:
MULTICOMP MULTICOMP
Manufacturer Part No:
2N4401
Newark Part No.:
08N8113
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
625mW
:
-
:
40V
:
250MHz
:
150°C
:
3Pins
:
NPN
:
300hFE
:
-
:
600mA
:
TO-92
:
MSL 1 - Unlimited
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Product Overview

The 2N4401 from Multicomp is a through hole, NPN low power, silicon planar epitaxial transistors in TO-92 metal can package. This device is used for general purpose switching applications.
  • Collector emitter voltage (Vce) of 40V
  • Continuous collector current (Ic) of 600mA
  • Power dissipation of 625mW
  • Operating junction temperature range from -55°C to 150°C
  • Collector emitter saturation voltage is less than 750mV at Ic=500mA
  • DC current gain is greater than 20 at Ic=0.1mA

Applications

Signal Processing, Power Management, Portable Devices, Consumer Electronics, Industrial

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