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MULTICOMP  2N4401  Bipolar (BJT) Single Transistor, NPN, 40 V, 250 MHz, 625 mW, 600 mA, 300 hFE

MULTICOMP 2N4401
Technical Data Sheet (238.75KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The 2N4401 from Multicomp is a through hole, NPN low power, silicon planar epitaxial transistors in TO-92 metal can package. This device is used for general purpose switching applications.
  • Collector emitter voltage (Vce) of 40V
  • Continuous collector current (Ic) of 600mA
  • Power dissipation of 625mW
  • Operating junction temperature range from -55°C to 150°C
  • Collector emitter saturation voltage is less than 750mV at Ic=500mA
  • DC current gain is greater than 20 at Ic=0.1mA

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
40V
Transition Frequency ft:
250MHz
Power Dissipation Pd:
625mW
DC Collector Current:
600mA
DC Current Gain hFE:
300hFE
Transistor Case Style:
TO-92
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Applications

  • Signal Processing;
  • Power Management;
  • Portable Devices;
  • Consumer Electronics;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
RoHS Compliant:
Yes
Authorized Distributor

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